| PART |
Description |
Maker |
| AM29LV040B-70JF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:40Mbit; Package/Case:32-PLCC; Peak Reflow Compatible (260 C):No; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Spansion, Inc.
|
| TS32MDOM44H TS64MDOM44H TS128MDOM44H TS256MDOM44H |
40-Pin IDE Flash Modules
40-Piin IDE Fllassh Module
|
Transcend Information. Inc.
|
| AM29LV010B-90EF AM29LV010B-70JF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:10Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 128K X 8 FLASH 3V PROM, 90 ns, PDSO32
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:10Mbit; Package/Case:32-PLCC; Peak Reflow Compatible (260 C):No; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Spansion, Inc.
|
| UMA4N UMB4N UMB8N EMB4 IMB4A FMA4A IMB8A EMA4 |
General purpose (dual digital transistors)
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:44-SOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
|
ROHM[Rohm]
Rohm CO.,LTD.
http://
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| W29EE011P-90 W29EE011P-15 W29EE011T-15 |
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
KJA SERIES III
128K X 8 CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 CMOS FLASH MEMORY 128K的8的CMOS闪存
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| LC374500ST |
Internal Synchronization Silicon Gate 4M (524288-word x 8-bit) mask ROM Pin Compatible with Flash Memory
|
SANYO[Sanyo Semicon Device]
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